GaAs

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• 網(wǎng)絡(luò)砷化鎵；砷化鉀；砷化稼

例句

GaAs FET Oscillator stabilized by a dielectric resonator with a feedback loop has been developed.

本文介紹了一種環(huán)路反饋式場(chǎng)效應(yīng)管介質(zhì)穩(wěn)頻振蕩器。

when the feed rate is larger, line speed on the surface have little effect on the roughness of GaAs films. 2.

當(dāng)進(jìn)給速度較大時(shí)提高線速度對(duì)單晶砷化鎵片的表面粗糙度影響不大。

The design of the broadband GaAs PHEMT monolithic true-time delay was described.

簡(jiǎn)要介紹了實(shí)時(shí)延遲線電路的基本概念，對(duì)電路設(shè)計(jì)流程進(jìn)行了闡述。

In this paper , a small Hall current sensor made from a GaAs Hall component is introduced.

介紹了一種利用砷化鎵霍爾元件設(shè)計(jì)的微型霍爾電流傳感器。

With the progress of the CMOS process, the CMOS RF process can compare with the traditional RF process like Bipolar, GaAs and so on.

隨著CMOS工藝的不斷進(jìn)步，CMOS射頻工藝和傳統(tǒng)的射頻工藝如雙極型工藝、GaAs工藝等有了可比性。

GaAs grown at low temperature, 24 the slowly recovering component observed in the ?

增長(zhǎng)材料溫度低、24日慢慢恢復(fù)組件中觀測(cè)到的？。

When the feed rate is small, the increased of cutting speed can significantly improve the surface roughness of GaAs chips;

當(dāng)進(jìn)給速度較小時(shí)，提高切割的線速度可以顯著提高單晶砷化鎵片的表面粗糙度；

Commercial GaAs epitaxial layers are of good enough quality that losses due to material and interface perturbations are negligible

市售GaAs外延層的質(zhì)量相當(dāng)高，故其材料和界面起伏引起的損耗可忽略不計(jì)。

GaAs semiconductor Generator rotator Temperature measuring system;

砷化鎵半導(dǎo)體；發(fā)電機(jī)轉(zhuǎn)子；測(cè)溫系統(tǒng)；

gallium arsenide metal semiconductor field effect transistor(GaAs MESFET)

砷化鎵金屬化半導(dǎo)體場(chǎng)效應(yīng)晶體管

Theoretical Analysis of Gain and Threshold Current Density for Long Wavelength GaAs-Based Quantum-Dot Lasers

GaAs基長(zhǎng)波長(zhǎng)量子點(diǎn)激光器增益和閾值電流密度的理論分析

Review and Prospect of Dryland Eco-Agriculture Research of Dingxi Experimental Station, GAAS, China

定西試驗(yàn)站旱農(nóng)生態(tài)研究回顧與展望

Stoichiometry in SI-GaAs Bulk Materials by Triple Axis Mode X-Ray Diffraction Measurements

X射線三軸晶衍射法測(cè)量半絕緣GaAs單晶的化學(xué)配比

Progress on the material structure design of GaAs-based quantum cascade lasers

GaAs基量子級(jí)聯(lián)激光器材料結(jié)構(gòu)設(shè)計(jì)的進(jìn)展

GAAS Generally Accepted Auditing Standard

通用審計(jì)標(biāo)準(zhǔn)

evidenced on GaAs-based compounds, 23 at a higher defect density the band structure is modified to

在這GaAs-based化合物、23在更高的缺陷密度能帶結(jié)構(gòu)中被修改

gallium arsenide (GaAs) injection laser

砷化鎵注入雷射

Determination of Milligram As and Se in Drinking Water by GAAS

石墨爐原子吸收法快速測(cè)定飲用水中微量砷、硒

The measurement of thermally stimulated current in SI-GaAs

半絕緣砷化鎵的熱激電流譜測(cè)量

Analyses of Surface Damage in SI-GaAs Wafers

砷化鎵晶片表面損傷層分析