mosfet
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例句
This can double or triple the current carrying capacity of the control, or produce a 20A control with a single MOSFET.
這可以雙重或三重目前的載客量的控制，或出示一20A條控制與一個單一的MOSFET。
as such, a circuit designed with L-mosfet usually can work fine without a Vbe (or Vgs) multiplier for thermal compensation.
同樣地，用L-mosfets設計的線路不用Vbe（或Vgs）倍增器作溫度補償可以工作得非常好。
From the late eighties to the early nineties, IGBT become a new composite device, which brings together the advantages of MOSFET and GTR.
IGBT作為八十年代末，九十年代初迅速發展起來的新型復合器件，它將MOSFET和GTR的優點集于一身。
In a hard switching mode the turning on of the MOSFET is not synchronized with the drain-source voltage value.
在硬開關里場效應晶體管的開啟波形拐點并不和漏源極電壓值同步。
The metal oxide semiconductor field effect transistor (MOSFET) works on a similar principle, but the diode is buried within the MOSFET.
在金屬氧化物半導體場效應晶體管（MOSFET）的作品在一個類似的原則，但二極管的MOSFET內掩埋。
This increase of the reflected voltage results in a higher drain-source voltage blocking MOSFET and longer duty cycles.
增加的反射電壓導致使用更高漏源極擊穿電壓的場效應晶體管和更大的開關占空比。
Ultimate analysis magnetic elements' characteristic, transformer, inductance design and MOSFET switch component's shaping.
最后分析了磁性元件的特性，變壓器，電感的設計和MOSFET開關器件的選型。
If the silicon bar is doped N, then the MOSFET is called an N-channel device.
如果摻硅欄N，則MOSFET被稱為N溝道器件。
The Mosfet transistor has been very popular in this application as it fulfill both requirements better then the bipolar transistor.
MOSFET的晶體管一直很受歡迎，在此應用程序，因為它fullfils雙方的要求，更好的話，雙極型晶體管。
No external sense resistor is needed, and no blocking diode is required due to the internal MOSFET architecture.
由于采用了內部MOSFET架構，所以不需要外部檢測電阻器和隔離二極管。
LED current sense pin. Connect a resistor from main switching MOSFET source, ISNS to GND to set the maximum LED current.
LED電流檢測腳。在主開關電路MOSFET的ISNS及GND腳間接入一個電阻可以對LED的最大電流進行設定。
The system also includes a switch control circuit to switch the MOSFET switches in synchronization with the three-phase current flow.
本系統還包括開關控制電路，用于與三相電流同步切換MOSFET開關。
The high frequency parasitic effect of MOSFET is emphasis on, included gate resistance, substrate resistance, and parasitic capacitance.
重點討論MOSFET的高頻寄生參數，包括柵電阻、襯底電阻、寄生電容等。
All semiconductor devices should be protected from static discharge, but MOSFETs are themost liable to build up a killing charge.
所有的半導體設備應該得到保護，免受靜電放電，但MOSFET的themost負責建立一個殺費。
A gate pin controls a dual N-channel MOSFET to ensure only voltages within the OV and UV window are passed to the output.
柵極引腳控制一個雙N溝道MOSFET，以確保僅在OV和UV窗口內的電壓通過并至輸出。
If reverse protection is not needed, only a single external MOSFET is required.
如果反向保護不需要，那么僅需要單個外部MOSFET。
Using MOSFET inverter technology, Simple circuit small size, light weight, high efficiency and energy saving.
采用MOSFET逆變技術，電路簡易，體積小，重量輕，高效節能。
Single flyback converter circuit, as well as the PWM signal, is used to control the MOSFET.
使用單端反激變換器電路，用PWM信號控制開關管MOSFET。
We test the shot noise by this testing system for short-channel MOSFETs and the diodes testing, and the results are satisfying.
應用本測試系統測試短溝道MOSFET和二極管散粒噪聲，得到了較好的測試結果。
Before soldering the centre lead of each MOSFET, bend it over towards the MOTOR- trace.
之前，該中心的焊錫鉛每個MOSFET管，彎管，它超過對電動機得無影無蹤。
The lead shorting devices protect the MOSFETs from charge buildup and the subsequent catastrophic discharge current.
牽頭負責短路保護裝置的建設和隨后的災難性放電電流的MOSFET。
Secondly, we analyzed the physical characteristic and noise characteristic of MOSFET, which is an important element of CMOS RFIC.
其次，對CMOS射頻集成電路中的重要元素—MOSFET的物理特性、噪聲特性進行分析；
The assembly of MOSFET is consisted of five main processes, which are wafer sawing, die attach, wire bond, molding, trim and form.
MOSFET的封裝主要由晶圓切割，晶粒黏貼，焊線，封塑，切割成型這五大流程組成。
The multi-threshold field MOSFET is characterized by easily changing the threshold voltage.
該多閾值場MOSFET具有閾值電壓易于實現變化的特點。
Using logic-level MOSFETs also allows the control to run on as few as four cells.
使用邏輯級別的MOSFET還允許控制上運行，只有4細胞。
MOSFETs with good body diode characteristics and ruggedness are needed in manyhigh voltage switching applications.
在許多高電壓開關應用當中，都需要采用具有良好特性的體二極管且耐用性強的MOSFET。
Because it depends on some process characteristics, it is difficult to predict accurately the threshold voltage of a MOSFET.
因為它取決于一些工藝特點，很難準確預測閾值電壓的場效應晶體管。
Allegro's A3901 offers a very small package size, low operating voltage and low voltage drop MOSFET outputs.
Allegro的A3901具有小巧精致的封裝尺寸，低工作電壓和低電壓降MOSFET輸出的特性。
The effect of neutral trap on tunneling current in ultrathin MOSFETs is investigated by numerical analysis.
用數值分析的方法討論了中性陷阱對超薄場效應晶體管（MOSFET）隧穿電流的影響。
A novel current reference source based on subthreshold MOSFET's with high power supply rejection ratio(PSRR) is presented.
基于亞閾值MOSFET，提出了一種新穎的高電源抑制比（PSRR）電流基準源。
The dielectric layer so formed may be used in the fabrication of MOSFETs (145).
這樣形成的介質層可以用于制造MOSFET（145）。
The clamping snubber circuit was set to the rated breakdown voltage of the MOSFET (600 V and 800 V respectively).
鉗位緩沖電路被設定在場效應晶體管的額定擊穿電壓上（分別為600伏特和800伏特）。
You should also clip an alligator clip onto the lead you are soldering when soldering a semiconductor (transistor, MOSFET, diode, IC).
你也應該剪輯一aligator剪輯上率先你是焊接時，焊接半導體（晶體管，MOSFET管，二極管，集成電路）。
The PA85 is a high voltage, high precision MOSFET operational amplifier.
PA85是一種高壓、高精度的MOSFET運算放大器。
Speech Topic : How to choose MOSFET for charge control switch of portable devise ?
演講題目：如何選擇MOSFET做為可攜式電器的充電控制開關？。
This paper focus on studying the realization of unipolar SPWM under the uses of the special MOSFET driver IR2130.
本文重點研究了使用特定的MOSFET驅動器IR2130下的單極性SPWM的實現。
Realistically, semiconductor switches such as MOSFETs or BJTs are non-ideal switches, but high efficiency controllers can still be built.
現實，半導體電晶體開關，如MOSFET或是非理想的開關，但高效率控制器仍然可以興建。
The second is RDSon, as some drivers have integrated high voltage MOSFETs.
其次就是RDSon，因為一些驅動器采用了集成高壓MOSFET。
The most typical, such as insulated gate bipolar transistors IGBT, its structure and the MOSFET is very similar.
最典型的如絕緣柵雙極性晶體管IGBT，它的結構和MOSFET十分相似。
According to the situation above, the model of MOSFET 3 is procedured based on SPICE simulation.
本文就是針對以上這種情況，使用了基于SPICE仿真程序的MOSFET三級模型。
