epitaxial
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英
例句
The first epitaxial layer is disposed over the substrate and doped to have the first conductivity type as well.
第一外延層被布置在襯底之上并且被摻雜為也具有第一導(dǎo)電類型。
Also the final texture of ISM processed Ni tape is stable after high temperature treatment, which can be used for epitaxial film growth.
進(jìn)行的高溫熱退火實(shí)驗(yàn)證明獲得的織構(gòu)在一定的條件下是穩(wěn)定的，可以用于外延薄膜的生長(zhǎng)；
An epitaxial deposition process including a dry etch process, followed by an epitaxial deposition process is disclosed.
本發(fā)明提供一外延沉積工藝，其包含干式蝕刻工藝與后續(xù)的外延沉積工藝。
Such an enhancement could be attributed to the reduce dislocation density in the lateral growth regions of the epitaxial layers.
如此的改善可歸因于在橫向長(zhǎng)磊晶層的區(qū)域缺陷密度減少造成的結(jié)果。
The light collection region collects photo-generated charge carriers and is disposed within the second epitaxial layer.
光收集區(qū)域收集光生電荷載流子并被布置在第二外延層內(nèi)。
The ALE-MBE technology was used to get better film quality and to control exactly the thickness of epitaxial layers for quantum dots growth.
以原子層-分子束方法磊晶（ALE-MBE）成長(zhǎng)銻化鎵，可成長(zhǎng)出較高的薄膜品質(zhì)，同時(shí)可準(zhǔn)確的控制量子點(diǎn)的成長(zhǎng)厚度。
The second epitaxial layer is disposed over the collector layer and doped to have the first conductivity type.
第二外延層被布置在收集器層上并且被摻雜為具有第一導(dǎo)電類型。
Experiments show that the epitaxial growth structure could be used in the preparation of APD devices.
測(cè)試結(jié)果表明，利用所采用的外延生長(zhǎng)結(jié)構(gòu)制備APD器件，具有可行性。
believed to result from a larger intrinsic defect density generated during the epitaxial growth.
據(jù)信是源于一個(gè)更大的內(nèi)在缺陷密度磊晶成長(zhǎng)過(guò)程中產(chǎn)生。
In this paper, experiment of homogeneous epitaxial , growing of single crystal diamond film by flame method in atmosphere was conducted.
采用大氣下火焰法進(jìn)行了金剛石單晶膜的同質(zhì)外延實(shí)驗(yàn)。
Finally, several measurements for improving epitaxial growth technics are also put forward.
通過(guò)對(duì)外延生長(zhǎng)過(guò)程的研究，提出了改進(jìn)外延生長(zhǎng)工藝的措施。
The measurements of XRD, SEM and XPS show that the as- grown BNN film is epitaxial single crystal with smooth surface.
X射線衍射，掃描電子顯微鏡，X射線光電子能借測(cè)量表明生長(zhǎng)的BNN膜是外延單晶膜。
Epitaxial deposition is then used to form an epitaxial layer on the epitaxy surface.
外延沉積接著用以形成一外延層于該外延表面上。
And a brief description of the development of epitaxial The number of shape Combination .
并簡(jiǎn)單描述數(shù)形結(jié)合發(fā)展的外延。
Further growth of continuous compound semiconductor thick films (15) or wafer is achieved by epitaxial lateral overgrowth using HVPE.
通過(guò)使用HVPE的外延橫向過(guò)生長(zhǎng)實(shí)現(xiàn)連續(xù)的化合物半導(dǎo)體厚膜（15）或晶片的進(jìn)一步的生長(zhǎng)。
There is process capacity for semiconductor LED in Tongling. So there is the basis for producing epitaxial wafers and tube cores.
我市已具備組裝加工半導(dǎo)體發(fā)光二極管能力，可以考慮在此基礎(chǔ)上引進(jìn)技術(shù)和設(shè)備進(jìn)行外延片和管芯的生產(chǎn)。
There are three procedures in LED production, namely epitaxial wafer, tube core and encapsulation.
在LED生產(chǎn)過(guò)程中，主要有外延片生長(zhǎng)、芯片和封裝三個(gè)環(huán)節(jié)。
A complication is that the films are strained and epitaxial, with hardly any defects.
一個(gè)復(fù)雜因素是薄膜為應(yīng)變和單晶的，幾乎沒(méi)有任何缺陷。
The four-point probe method is used on very thin samples such as epitaxial wafers and conductive coatings.
四探針法用在非常薄的樣品，例如外延晶圓片和導(dǎo)電涂層上。
Test method for the surface quality of polished silicon wafers and epitaxial wafers by optical-reflection
硅拋光片和外延片表面質(zhì)量光反射測(cè)試方法
Commercial GaAs epitaxial layers are of good enough quality that losses due to material and interface perturbations are negligible
市售GaAs外延層的質(zhì)量相當(dāng)高，故其材料和界面起伏引起的損耗可忽略不計(jì)。
The flow of the gas containing dopant ions is varied according to a linear ramp during the epitaxial growth;
含摻雜物離子的氣體的流量根據(jù)外延生長(zhǎng)期間的線性斜坡變化；
The processing process comprises the following steps of: combining an epitaxial layer and a thick silicon substrate; scribing;
該制程包括下列步驟：外延層與厚硅襯底結(jié)合的步驟；
Testing of semi-conductive inorganic materials; measuring the thickness of silicon epitaxial layer thickness by infrared interference method
無(wú)機(jī)半導(dǎo)體材料的檢驗(yàn)。用紅外線干涉法測(cè)量硅外延生長(zhǎng)層的的厚度
Study of transition metal silicides thin film epitaxial growth on silicon substrate
硅基底上外延生長(zhǎng)過(guò)渡金屬硅化物薄膜的研究
Testing of materials for semiconductor technology - Determination of defect types and defect densities of silicon epitaxial layers
半導(dǎo)體工藝材料的檢驗(yàn).硅晶體外延層中缺陷種類和缺陷密度測(cè)定
Analysis of the Structure and Optical Properties of Epitaxial ZnO Films at Different Substrate Temperatures
不同襯底溫度下ZnO外延薄膜的結(jié)構(gòu)及光學(xué)特性分析
Algebraic Multigrid Method for a Multiscale Elastic Model of Thin Epitaxial Films
求解外延膜多尺度應(yīng)變模型的代數(shù)多重網(wǎng)格法
Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance
重摻雜襯底上輕摻雜硅外延層厚度的紅外反射測(cè)量方法
Laser-enhanced epitaxial growth of semiconductor heterostructure
激光增進(jìn)的半導(dǎo)體異質(zhì)結(jié)外延生長(zhǎng)
Nucleation behavior and multifractal analysis of early stage of surfactant-mediated epitaxial growth
表面劑誘導(dǎo)外延中的形核生長(zhǎng)及多重分形分析
Test Method for Thickness of Epitaxial or Diffused Layers in Silicon by the Angle Lapping and Staining Technique
用磨角和染色技術(shù)測(cè)定硅材料外延層或擴(kuò)散層厚度的試驗(yàn)方法
Investigation of the elastic strain fields of hetero-epitaxial self-organized quantum dots
異質(zhì)外延自組織量子點(diǎn)彈性應(yīng)變場(chǎng)分布的研究
A Dynamics Study of Surface Atoms Course During Film Epitaxial Growth
薄膜外延生長(zhǎng)中表面原子過(guò)程的動(dòng)力學(xué)研究
Scanning tunneling microscopy studies on the epitaxial growth of organic semiconductors
有機(jī)半導(dǎo)體外延生長(zhǎng)的掃描隧道顯微鏡研究
Structure and formation of misfit dislocations in an epitaxial fcc film
面心立方晶體外延膜沉積生長(zhǎng)中失配位錯(cuò)的結(jié)構(gòu)與形成過(guò)程
High Quality GaN Grown by Epitaxial Lateral Overgrowth Technique and Epitaxial Defects Observation
側(cè)向外延法生長(zhǎng)的高質(zhì)量GaN及其外延缺陷的觀察
Standard test method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes
用柵控和非柵控二極管的電壓-電容關(guān)系測(cè)定硅外延層中凈載流子濃度的標(biāo)準(zhǔn)方法
Effects of long-range interaction on elastic strain fields of hetero-epitaxial self-organized conical quantum dots
異質(zhì)外延自組織錐形量子點(diǎn)長(zhǎng)程相互作用對(duì)彈性應(yīng)變場(chǎng)分布的影響
The lowest crystallization temperature and self-assembling growth of epitaxial thin films in BST series oxide
BST類鐵電薄膜的最低晶化溫度和自裝生長(zhǎng)研究
