mram

美 　英

• 網(wǎng)絡(luò)磁性隨機(jī)存儲(chǔ)器(magnetic random access memory)；磁隨機(jī)存儲(chǔ)器；磁性記憶體

英漢解釋

abbr.

1. magnetic random access memory

例句

The initial applications for the technology are expected to be in mobile applications where power efficiency is highly valued.

預(yù)計(jì)STT-MRAM芯片初期的用途將包括對(duì)耗電量要求很高的移動(dòng)設(shè)備。

Ferroelectric RAM (FRAM) and magnetoresistive RAM (MRAM) are the best-funded and most-evolved of the emerging memory technologies.

鐵電RAM（FRAM）和磁阻RAM（MRAM）是存儲(chǔ)器新技術(shù)中投入最多、研究最深入的兩項(xiàng)技術(shù)。

A magnetic random access memory (MRAM) and a manufacturing method and a programming method thereof are provided.

本發(fā)明公開(kāi)了一種磁性存儲(chǔ)器及其制造方法與寫(xiě)入方法。

Motorola, IBM, and Hewlett-Packard are all developing magnetic RAM (MRAM) which seems poised to become the nonvolatile technology of choice.

摩托羅拉、IBM和惠普都在開(kāi)發(fā)磁性隨機(jī)存取存儲(chǔ)器（MRAM），這種存儲(chǔ)器似乎有成為業(yè)界優(yōu)先選擇的非易失性存儲(chǔ)技術(shù)的趨勢(shì)。

STT-RAM is a second-generation MRAM technology that is said to solve some of the problems posed by conventional MRAM structures.

通常認(rèn)為STT-RAM是MRAM技術(shù)的第二代技術(shù)，這項(xiàng)技術(shù)解決了常規(guī)MRAM的一些問(wèn)題。

MRAM is non-volatile memory, it is also power efficient and operates at ultra-high speed, the companies said in a joint statement.

據(jù)兩家公司的聯(lián)合聲明稱(chēng)，MRAM是一種非易失性存儲(chǔ)技術(shù)，它具備速度極快和耗電量低的優(yōu)點(diǎn)。

These magnetic random-access memories, or MRAMs, went on sale in 2006 from Freescale Semiconductor, a spin-off of Motorola.

這種磁性隨機(jī)存取記憶體（MRAM）在2006年由摩托羅拉的子公司飛思卡爾半導(dǎo)體引入市場(chǎng)。

In this dissertation, we investigate the key issue of the MRAM - writing efficiency.

在本論文中，主要是針對(duì)磁性記憶體的主要課題進(jìn)行研究-磁性記憶體的寫(xiě)入效益。

But IBM recently demonstrated that it can use magnetic tunnel junctions to inject the current, as they do for MRAM.

但是最近IBM演示了能利用磁隧道結(jié)將電流注入進(jìn)去，如同他們在為MRAM所做的那樣。

Digit and word lines of MRAM structures are subsequently formed.

然后形成MRAM結(jié)構(gòu)的數(shù)字線和字線。

A method of forming minimally spaced MRAM structures is disclosed.

本發(fā)明公開(kāi)了一種形成最小間隔MRAM結(jié)構(gòu)的方法。

There is still a long way to go before MRAM is ready for prime time.

在MRAM存儲(chǔ)器達(dá)到萬(wàn)事齊備、只欠東風(fēng)之前還有一段很長(zhǎng)的路要走。

Unlike conventional computer memories, the MRAM chips do not lose their data if power is interrupted;

和一般的電腦記憶體不同，MRAM晶片在電源中斷時(shí)不會(huì)損失資料；

Freescale First Put MRAM Technology into Business Applications

飛思卡爾率先將MRAM技術(shù)投入商用

Research on the Key Technology of MRAM Storage

新型MRAM存儲(chǔ)器存取核心技術(shù)的研究