photoresist

photoresist

美 [?fo?to?r?'z?st]  英 [f??t??r?'z?st]

  • n.【物】光致抗蝕劑
  • 網絡光阻;光刻膠;光阻劑

英漢解釋

n.
1.
【物】光致抗蝕劑

英英解釋

n.

例句

When using the sputtering nickel system, photoresist and nickel Crosslinking became extremely easy-to-be strong enough to produce water.

擱置濺射鍍鎳編制交聯變得格外堅硬爆發水紋

Where the UV light shines through, it chemically weakens the photoresist, leaving a pattern on the surface of the silicon.

紫外照射穿透地方光刻化學特性削弱使晶片表面留下圖案

Here are a few solutions: firstly, plasma kinetic dedust, in a high vacuum conditions, oxygen ions and photoresist or chemical reaction.

這邊幾個處置方案第一等離子不興一個真空境況離子化學精神反響

A small undesired hole in an oxide, opaque region of a mask or reticle, or in a photoresist layer.

氧化物掩模標線不透明區域光刻需要

Comparing with all the existing sacrificial layer materials, the photoresist being used as sacrificial layers has some advantages.

現有犧牲材料相比犧牲材料具有一些優越性

Coating compositions of the invention are useful as photoresist overcoat layers, including in immersion lithography processing.

發明涂料組合可用作光覆蓋涂層包括可用浸漬平版印刷工藝

Otherwise, using photoresist as sacrificial layers does not restrict the thickness of structures and the choice of materials.

此外用光犧牲材料影響結構厚度材料選擇

A new method with a one wavelength laser for making 3D diffusion objects true color rainbow hologram on the photoresist plate is presented.

提出一種波長激光制作彩色彩虹全息圖方法

aqueous solution as the developer the photoresist can be of negative tone.

氧化-乙醇溶液顯影可以得到光刻圖形

The defining steps of photoresist layer includes exposure and development and the lugs may be joined through stoving to melt.

限定步驟包括曝光顯影利用烘烤步驟使溶融化接合

The invention provides a photosensitive compound having low edge roughness (LER) photoresist pattern.

發明提供形成具有LER邊緣粗糙度光刻圖案感光化合物

In microelectronics, the process of removing material, on a chip , left exposed by the exposure and development of the photoresist.

微電子技術通過曝光顯影光刻除去芯片物質露出部分工藝

The said method can obtain certain painting homogeneity and relatively high photoresist utilization.

發明方法保證一定均勻度同時獲得較高使用

Positive Photoresist is rubber particles upward, the same height and diameter of the rubber.

就是膠皮顆粒向上高度直徑相等膠皮

In addition, the distribution of light fields in the photoresist layer is analyzed by finite-difference time-domain method.

另外本文利用有限差分分析光刻內部分布

As photoresist has the exposal characteristics, two-spectrum method is fit for measuring the thickness of photoresist.

針對光刻曝光特性光譜適合檢測

Using AZ4620 photoresist throw at plane glass, the measuring thickness of photoresist is benchmark through ellipsometer.

采用AZ4620光刻平面玻璃測量結果基準

A photoresist pattern can be formed on the dielectric.

電介質形成圖案

This paper introduces a technical method of etching optical dividing disc with 302~# negative type photoresist .

本文介紹采用302光刻刻制光學工藝方法

Study on Process of Water-soluble Printing Photoresist.

水性印花感光制版材料研究

R. 177 so that it can be used for modulation the photoresist.

177進行分散穩定處理使能夠適用于光調制

A novel pressure sensor based on a high-aspect-ratio structure formed by SU-8 photoresist is proposed.

主要提出一種利用SU-8光刻形成高深結構新型壓力傳感器

Preparation of Antifoaming Agent Used for Developing Semi-Aqueous Dry Film Photoresist

印制線路板顯影研制

Stripping of Photoresist by an Atmospheric Pressure Radio-Frequency Plasma

常壓射頻低溫等離子體清洗光刻研究

stripping photoresist to obtain the electrode diagram of a diagrammatic all-organic field-effect transistor device;

剝離光刻得到圖形全有機場效應晶體管器件電極

Acid Proliferation Generator and Its Application in Chemically Amplified Photoresist

增殖及其化學增幅體系應用

stripping off photoresist with acetone to carry out imaging to a bottom electrode;

丙酮剝離光刻電極進行圖形

Calculating the Contrast and Threshold Sensitivity of a Positive Photoresist

計算對比閾限靈敏度

forming a hard mask layer and a patterned photoresist layer on the semiconductor substrate;

圖案形成第一開口

determining effective adhesion of photoresist to hard - surface photomask blanks and semiconductor wafers during etching

測定蝕刻期間表面半導體有效粘附

Study of Diffractive Field Based Angular Spectrum Theory in Thick Film Photoresist

基于理論光刻衍射研究

A method for processing a photoresist composition, comprises: (a) applying on a substrate a photoresist composition;

發明涉及一種用于處理光刻組合方法包括:(a光刻組合基材

Preparation and Characterization of Methacrylate Photoresist

甲基丙烯酸酯光刻制備表征

Experimental pretreatment of photoresist emulsified wastewater in the electronic industry

電子工業乳化廢水預處理試驗研究

Enhanced Exposure Model and Its Parameter Measurements for Thick Photoresist

曝光模型及其參數測量

cyclized polyisoprene rubber negative photoresist; ultraviolet negative photoresist

戊二烯橡膠光刻

Etch Residue Removers and Photoresist Strippers for Semiconductor Cleaning Applications

半導體清洗應用殘渣去除

Modeling and Simulation of Negative Chemically Amplified Photoresist for Lithography Process

化學放大光刻模型模擬

and to determine adequate measures of photoresist performance for quality control purposes

用來測定材料質量控制方面效力

Key technique of photoresist through-mask Electrochemical micromachining

光刻掩膜微細電化學加工參數試驗研究

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